首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   2546篇
  免费   68篇
  国内免费   119篇
化学   880篇
晶体学   28篇
力学   191篇
综合类   2篇
数学   147篇
物理学   1485篇
  2024年   1篇
  2023年   21篇
  2022年   26篇
  2021年   26篇
  2020年   44篇
  2019年   32篇
  2018年   33篇
  2017年   43篇
  2016年   74篇
  2015年   69篇
  2014年   117篇
  2013年   113篇
  2012年   120篇
  2011年   278篇
  2010年   194篇
  2009年   248篇
  2008年   215篇
  2007年   214篇
  2006年   195篇
  2005年   122篇
  2004年   86篇
  2003年   76篇
  2002年   81篇
  2001年   36篇
  2000年   41篇
  1999年   48篇
  1998年   29篇
  1997年   14篇
  1996年   10篇
  1995年   18篇
  1994年   9篇
  1993年   10篇
  1992年   6篇
  1991年   9篇
  1990年   7篇
  1989年   10篇
  1988年   2篇
  1987年   7篇
  1986年   5篇
  1985年   3篇
  1984年   2篇
  1983年   6篇
  1982年   1篇
  1981年   8篇
  1979年   2篇
  1978年   13篇
  1976年   1篇
  1975年   4篇
  1973年   4篇
排序方式: 共有2733条查询结果,搜索用时 15 毫秒
1.
《Comptes Rendus Physique》2015,16(2):193-203
The field of multiferroics has experienced a rapid progress resulting in the discovery of many new physical phenomena. BiFeO3 (BFO) compound, which is one of the few room-temperature single-phase multiferroics, has contributed subsequently to this progress. As a result, significant review articles have been devoted specifically to this famous system. This chapter is dedicated to the strain effects on the structure stability and property changes of BFO thin films. It is a short and non-exhaustive topical overview that may be seen as an invitation for interested readers to go beyond. There is a very active and prolific research in this field and we apologize to the authors whose relevant work is not cited here. After a short introduction, we will thus review the effect of strain on BFO films by describing the consequences on the structure and the phase transitions as well as on polar, magnetic and magnetoelectric properties.  相似文献   
2.
Non-stoichiometric ternary chalcogenides (Zn,Fe)S were prepared in the film form by pyrolytic spray deposition technique, using air/nitrogen as the carrier gas. The precursor solution comprised of ZnCl2, FeCl2 and thiourea. The depositions were carried out under optimum conditions of experimental parameters viz. carrier gas (air/nitrogen) flow rate, concentration of precursor constituents, nozzle substrate distance and temperature of quartz substrate. The deposited thin films were later sintered in argon at 1073 K for 120 min.The structural, compositional and optical properties of the sintered thin films were studied. X-ray diffraction studies of the thin films indicated the presence of (Zn,Fe)S solid solution with prominent cubic sphalerite phase while surface morphology as determined by scanning electron microscopy (SEM) revealed a granular structure.The chemical composition of the resulting thin films as analyzed by energy dispersive X-ray analysis (EDAX) reflected the composition of the precursor solutions from which the depositions were carried out with Fe at% values ranging from 0.4 up to 33.SEM micrographs of thin films reveal that the grain sizes of the thin films prepared using air as carrier gas and N2 as carrier gas are in the vicinity of 300 and 150 nm, respectively.The diffuse transmittance measurements for thin films, as a function of wavelength reveal the dependence of direct optical band gap on Fe content and type of phase.  相似文献   
3.
Thin films of, N-N′diphenyl 1-4phenylene-diamineane are prepared using vacuum sublimation technique. The electrical conductivity from room temperature down to 127 K is studied. It is found that the conduction of charge carriers obeys T−1/2 dependence on temperature. The average hopping distance, hopping energy, density of states and their variation due to post-deposition heat treatment are studied. Schottky diodes are fabricated with gold as ohmic contact and aluminium as Schottky contact. From the observed current voltage characteristics the saturation current density, diode ideality factor and the barrier height are determined. Their variation with air annealing is also investigated.  相似文献   
4.
5.
工作气压对电子束沉积ZrO2薄膜折射率和聚集密度的影响   总被引:6,自引:2,他引:4  
采用电子束蒸发的方法,用石英晶体振荡法监控薄膜的蒸发速率,在不同工作气压下制备了ZrO2薄膜样品.在相调制型椭圆偏振光谱仪和分光光度计上对样品的光谱特性进行了测试.根据波长漂移的理论,计算出薄膜的聚集密度.结果表明,随着工作气压的降低,薄膜的聚集密度和折射率都随之增大.  相似文献   
6.
We study the asymptotic behaviour of the posterior distributions for a one-parameter family of discontinuous densities. It is shown that a suitably centered and normalized posterior converges almost surely to an exponential limit in the total variation norm. Further, asymptotic expansions for the density, distribution function, moments and quantiles of the posterior are also obtained. It is to be noted that, in view of the results of Ghosh et al. (1994, Statistical Decision Theory and Related Topics V, 183-199, Springer, New York) and Ghosal et al. (1995, Ann. Statist., 23, 2145-2152), the nonregular cases considered here are essentially the only ones for which the posterior distributions converge. The results obtained here are also supported by a simulation experiment.  相似文献   
7.
Two types of mechanisms are proposed for mound coarsening during unstable epitaxial growth: stochastic, due to deposition noise, and deterministic, due to mass currents driven by surface energy differences. Both yield the relation H=(RWL)2 between the typical mound height W, mound size L, and the film thickness H. An analysis of simulations and experimental data shows that the parameter R saturates to a value which discriminates sharply between stochastic () and deterministic () coarsening. We derive a scaling relation between the coarsening exponent 1/z and the mound-height exponent which, for a saturated mound slope, yields . Received: 11 November 1997 / Revised in final form: 28 November 1997 / Accepted: 28 November 1997  相似文献   
8.
利用指数二分性和泛函分析方法,我们研究了当未扰动系统不具有异宿流形的退化异宿分支.我们利用Melnikov型向量给出了系统在退化情形下的横截异宿轨道存在的充分条件.  相似文献   
9.
Growth characteristics and surface morphology of boron carbide films fabricated by ablating a B4C target in high vacuum with a traditional KrF excimer laser and a high brightness hybrid dye/excimer laser system emitting at the same wavelength while delivering 700 fs pulses are compared. The ultrashort pulse processing is highly effective. Energy densities between 0.25 and 2 J cm−2 result in apparent growth rates ranging from 0.017 to 0.085 nm/pulse. Ablation with nanosecond pulses of one order of magnitude higher energy densities yields smaller growth rates, the figures increase from 0.002 to 0.016 nm/pulse within the 2-14.3 J cm−2 fluence window. 2D thickness maps derived from variable angle spectroscopic ellipsometry reveal that, when ablating with sub-ps pulses, the spot size rather than the energy density determines both the deposition rate and the angular distribution of film material. Pulse shortening leads to significant improvement in surface morphology, as well. While droplets with number densities ranging from 1 × 104 to 7 × 104 mm−2 deteriorate the surface of the films deposited by the KrF excimer laser, sub-ps pulses produce practically droplet-free films. The absence of droplets has also a beneficial effect on the stoichiometry and homogeneity of the films fabricated by ultrashort pulses.  相似文献   
10.
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号